Low‐Frequency Noise Evolution in Thin SiN _x ReRAMs After Sequential Constant Voltage Stress

In this work, thin SiN _x films in MIS ReRAM cells are stressed with a constant voltage for various sequential durations (25, 45, 65, 110 and 250 s) and the low‐frequency noise signal generated after each stress duration is measured using different sampling rates. This enables the capture of both fast and slow trapping phenomena and the monitoring of defect creation evolution. Random telegraph noise (RTN) signals illustrate the gradual formation of various defects in the material, which deteriorates and ultimately results in catastrophic failure. This progressively causes the slope of the power spectral density (PSD) plot to transition from 1/ f ² to 1/ f behavior. The analysis of these signals can reveal the properties of these defects.