Low-temperature, high-speed solution-processed strontium zirconate electrochemical metallization resistive memory

Sol–gel SrZrO _x ECM RRAM fabricated at 180 °C with 0.3 M precursor achieves controlled Ag filament formation and suppressed leakage, enabling a 10 ⁵ memory window, >10 year retention, 2 × 10 ³ -cycle endurance, and 20 ns switching.