Lattice engineering of thermally evaporated perovskite enables monolithically integrated micro-display

Perovskite light-emitting diodes (PeLEDs) have recently demonstrated substantial potential for next-generation micro-displays due to their excellent efficiency and brightness. However, the best-performing PeLEDs typically suffer from low brightness and severe efficiency roll-off, as well as the considerable challenge of monolithic integration at pixel sizes down to 2 μm. Here, we present a lattice-engineering approach for thermally evaporated perovskites that simultaneously achieves high-performance PeLEDs and high-definition monolithic integration for perovskite micro-display applications. The lattice engineering achieved by in situ incorporation of FABr effectively suppresses Ruddlesden–Popper (RP) faults within nanocrystals and yields a uniform electric-field distribution, thereby reducing charge accumulation and suppressing Auger recombination. We further fabricated PeLEDs with a fully vacuum-deposited device architecture, demonstrating an external quantum efficiency (EQE) of 20.6% and high brightness levels exceeding 160,000 cd m ⁻² , with reduced efficiency roll-off. More importantly, through process and device optimizations, we achieved nanometer-scale conformal deposition on the surfaces of complementary metal-oxide-semiconductor (CMOS) driver pixel pits, thereby developing a perovskite micro-display with a resolution of 3,000 pixels per inch (PPI) capable of displaying vivid video. Our research paves the way for advancing micro-display technology.