Investigation of the Semiconductor Properties and Chronoamperometry of BI2SE3 Thin Films Obtained by Electrochemical Deposition

Thin Bi2Se3 films were successfully electrodeposited from a non-aqueous ethylene glycol-based electrolyte and subsequently underwent thermal treatment in an Ar atmosphere to improve crystallinity. The phase and compositional properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), Fourier-transform infrared spectroscopy (FTIR), and Raman spectroscopy. XRD and Raman analyses confirmed the formation of crystalline rhombohedral Bi2Se3, while FTIR measurements indicated minor surface oxidation. The electrical and semiconductor properties of the films were investigated through current–voltage and temperature-dependent conductivity measurements. The activation energy associated with intrinsic conduction was determined to be 0.25 eV, while the temperature sensitivity coefficient and temperature coefficient of resistance were found to be 2903 K and 0.032–0.013 K−1, respectively. Infrared photoconductivity measurements in the wavelength range of 2800–4000 nm revealed a pronounced photoresponse near the band-gap energy of Bi2Se3. The obtained results demonstrate the potential of electrodeposited Bi2Se3 thin films for infrared-sensitive semiconductor and optoelectronic applications.