Investigation of SiC Power Module Requirements for Smart Grid Applications

Post-Silicon power devices, specifically SiC and GaN, provide attributes such as high switching speed, high voltage withstand and high temperature operation. These provide attractive performance characteristics. However, other attributes, such as high Young’s modulus and difficult metallization present packaging challenges that can directly affect long-term packaging reliability. As with all electro-physical systems, the interdependencies of electrical, mechanical and thermal forces must be co-investigated during physical development and fabrication to assure suitable reliability. This study is a first look at critical issues that affect general high voltage (>10kV), high temperature (>200°C), power module packaging applicable to next generation approaches for Future Renewable Electric Energy Delivery and Management Systems. The initial assessments establish electrical and thermal stress boundaries and initial requirements on materials and material characteristics. This paper is a survey of issues for the early stages of the program focusing on very high electric field stresses and time-varying high current densities.