DOI: 10.36222/ejt.1720559 ISSN: 2536-5010

Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP

Murat Şen, Seda Üstün Ercan
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High frequency switching elements that cause electromagnetic interference (EMI) are widely used in low voltage power distribution grid when considering todays smart grid components. One of these high frequency power electronic switching devices is the DC-DC converter. EMI emissions from DC-DC converters directly affect the wired communication method known as power line communication (PLC), which can carry the communication signal from the transmitter point to the receiver point using the existing power lines of the distribution grid. In this experimental research, the frame error rates (FER) of G3-PLC corresponding to Random Gauss and Random Linear Spread Spectrum Modulation (SSM) indexes were measured in real time, and the effect of EMI emissions of the Random SSM controlled silicon carbide mosfet based DC-DC converter on G3-PLC performance was revealed. The modulation index points that cause acceptable FER for G3-PLC were determined for Random Gauss and Random Linear SSM.

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