DOI: 10.1039/d6tc01309k ISSN: 2050-7526

Interfacial field engineering enables a PPC-suppressed β-Ga 2 O 3 -based broadband photodetector

Junling Yu, Fenyun Mou, Jie Li, Yu Liao, Chengyu Xie, Ya Li, Yanling Shi, Qibiao Wang, Wenzheng Rong
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Interfacial field engineering in G/β-Ga 2 O 3 /Si enables 254–1064 nm self-powered photodetection while suppressing oxygen-vacancy-induced persistent photoconductivity.

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