DOI: 10.1039/d6tc00900j ISSN: 2050-7526
Interfacial engineering of nitrogen-doped silicon carbide for reliable hybrid bonding in advanced semiconductor integration
Haibo Yang, Yihao Meng, Lirui Zhang, Fei Ding, Yu Zhang, Yudong Yang, Qiushi Kang, Chuan Chen, Renxi Jin, Liqiang Cao, Qidong WangThis review summarizes engineering strategies for SiCN dielectric films in hybrid bonding interconnects, covering fabrication methods, bonding mechanisms, and the structure–property relationships that determine bonding performance.