Interface-enabled low-voltage SiO2 gating of VO2 nanobeams for large room-temperature resistance modulation

Three-terminal gating offers an effective strategy for modulating the electrical transport and metal-insulator transition (MIT) behavior of vanadium dioxide (VO2), while conventional SiO2-gated VO2 devices usually show limited gate tunability. Here, we demonstrate large low-voltage resistance modulation in VO2 nanobeams directly grown on SiO2/Si substrates. The direct-growth configuration establishes a distinct VO2/SiO2 interfacial configuration in a Si-compatible back-gated device geometry. At room temperature, the channel resistance is reduced by approximately 75% under a gate voltage of only 3 V, corresponding to an electric field of 0.1 MV cm−1. When the device is biased near the MIT temperature, the same gate voltage triggers a gate-assisted transition, leading to a current increase of more than two orders of magnitude and a resistance modulation above 99%. In contrast, transferred VO2 nanobeam devices exhibit negligible gate-induced modulation even under much higher gate voltages, supporting an important role of the direct-growth-enabled VO2/SiO2 interfacial configuration in the enhanced gate response. These findings suggest that interfacial engineering may provide an effective route for improving the gate tunability of SiO2-gated VO2 devices, with potential for low-voltage, Si-compatible correlated-oxide electronics.