Integration of III‐V Quantum Dot Photonic Devices on Silicon Nitride via Lithography‐Aligned Micro‐Transfer Printing

ABSTRACT

Quantum photonic integrated circuits (QPICs) provide a route toward complex quantum information processing, but heterogeneous integration of high performance active quantum photonic devices with low‐loss passive circuitry remains a major fabrication challenge. Conventional wafer bonding and process‐then‐transfer micro‐transfer printing are limited by thermo‐mechanical stress or mechanical placement tolerances. Here, we demonstrate a lithography‐aligned micro‐transfer printing (µTP) strategy in which unpatterned III‐V membranes are locally transfer‐printed onto a silicon nitride (SiN _x ) platform and subsequently patterned by marker‐based electron beam lithography. This transfer‐then‐process workflow shifts the critical alignment requirement from mechanical placement to lithographic overlay. We demonstrate a microring resonator with a Q factor of 4981 ± 57, photonic crystal waveguide integration with Purcell‐enhanced single‐photon emission, and a Hanbury Brown and Twiss (HBT) measurement using an on chip SiN _x multimode interference (MMI) beam splitter under 785 nm pulsed excitation, yielding g ⁽²⁾ (0) = 0.045 ± 0.008.