InP Membrane Array and InGaAsP MQWs Laterally Grown on Si-Photonics 220 nm SOI

Abstract

Selective lateral heteroepitaxy is a promising strategy for integrating high-density III−V membrane lasers on silicon-on-insulator (SOI) substrates. However, achieving large-area, high-density III−V membrane arrays on 220 nm silicon photonics SOI platforms and developing efficient InGaAsP-based gain media remain unresolved challenges. Here, we demonstrate the high-quality epitaxial growth of large-area, high-density InP membrane arrays on the standard 220 nm SOI Si photonics platform using selective lateral heteroepitaxy. The resulting membranes exhibit lengths of 10−50 μm and lateral widths of 6−6.5 μm, providing sufficient lateral dimensions for the fabrication of electrically pumped membrane lasers. Furthermore, we introduce InGaAsP/InP multiple quantum wells (MQWs) as the active material system. We systematically investigate the incorporation of InGaAsP during lateral growth, enabling precise composition control. Based on this, we realize tensile-strained InGaAsP MQWs providing TE⊥-polarized gain in the O-band. These results highlight selective lateral heteroepitaxy as a promising route toward the monolithic integration of efficient III−V membrane laser arrays on Si photonics platform.