DOI: 10.54287/gujsa.1961545 ISSN: 2147-9542

Influence of Beta Irradiation on the Electrical Characteristics of Nano-MPS Structure Schottky Diodes

Özlem Abay, Sema Bilge Ocak
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In this study, the changes in the fundamental electrical parameters of Au/PVA(5% Graphene doped)/n-Si/Au (MPS) Schottky diodes produced by the electro-spin coating method were investigated when exposed to beta radiation. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were taken at a frequency of 1 MHz, before and after (20 kGy) beta radiation. As the radiation source, a 90Sr (Strontium-90) Beta (β) source with a dose rate of 22 mGy per hour was used. Using I-V measurements, electrical parameters such as reverse saturation current (I0), ideality factor (n), zero bias barrier height (ФB0), rectification ratio (RR), series resistance (Rs), and short circuit resistance (Rsh) were calculated. When radiation is applied, the Rs and leakage current values decrease, while the Rsh and RR values increase, indicating that the structure possesses ideal diode characteristics and is resistant to radiation. Interface state density (Nss), an important parameter attained from I-V measurements, was also calculated. The calculated Nss value is on the order of ~1013 eV-1cm-2, and this value is not large enough to impair device performance. In inculusion, the fundamental electrical parameters such as the diffusion potential of the diode (VD), the density of the transmitter additive atoms (ND), Fermi energy (EF), maximum electric field (Em), consumption layer width (WD) and barrier height (ФB(CV)) were calculated from C-V measurements. When radiation was applied, the VD, ND, Em, and ФB(CV) values declined, while the EF and WD values raised. According to the findings, when the produced MPS structure was exposed to beta radiation, a decline/raise occurred in its electrical parameters. It was concluded that these decline/raise did not have an effect that would impair diode performance. For all these reasons, it has been concluded that PVA (5% Graphene doped) interfacial polymer material is an ideal material for obtaining radiation resistant and high-quality Schottky diodes.

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