DOI: 10.1039/d6tc03263j ISSN: 2050-7526

Hydrogen-bonding-enabled Ohmic contacts and enhanced tunneling in Ti 3 C 2 T 2 /Janus MoSSe (T =

Xinyi Zeng, Yue Zhang, Zhengqin Zhao, Song Qiu, Hui Wang
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Hydrogen bonding strengthens interfacial coupling and lowers the tunneling barrier in –OH-terminated Ti 3 C 2 T 2 /Janus MoSSe, enabling n-type Ohmic contact, whereas vdW-dominated –O/–F interfaces form Schottky contacts.

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