DOI: 10.1002/jsid.1252 ISSN:
High‐performance MEMS shutter display with metal‐oxide thin‐film transistors and optimized MEMS element
Sheikh Abdullah Al Nusayer, Patrick Schalberger, Holger Baur, Florian Kleber, Norbert Fruehauf- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
Abstract
Active matrix prestressed microelectromechanical shutter displays enable outstanding optical properties as well as robust operating performance. The microelectromechanical systems (MEMS) shutter elements have been optimized for higher light outcoupling efficiency with lower operation voltage and higher pixel density. The MEMS elements have been co‐fabricated with self‐aligned metal‐oxide thin‐film transistors (TFTs). Several optimizations were required to integrate MEMS process without hampering the performance of both elements. The optimized display process requires only seven photolithographic masks with ensuring proper compatibility between MEMS shutter and metal‐oxide TFT process.