High–Performance and Low–Power Complementary Transistors Based on Red Carbon Ribbon

Due to significant progress in architecture through the vertical stacking of negative channel metal oxide semiconductor (MOS) and positive channel MOS devices, the complementary field–effect transistor (CFET) is regarded as one of the most promising technologies for the next generation beyond the gate–all–around (GAA) architecture. This study comprehensively investigated the transport characteristics of one–dimensional (1D) red carbon ribbon (RCR) field–effect transistors (1D–RCR–FETs) with GAA gate and sub 5 nm gate lengths (Lg), using ab initio methods implemented in the Atomistix ToolKit 2019 software. Based on theoretical simulation results, n– and p–type GAA 1D–RCR–FETs with Lg of 5 nm satisfied the low–power (LP) and high–performance (HP) criteria for the 2039 horizon, according to the International Roadmap for Devices and Systems (IRDS) 2024 edition, and the corresponding results with Lg of 3 nm met the HP criteria for the 2039 horizon. Notably, both LP and HP applications demonstrated excellent symmetry between n– and p–FET devices at Lg = 5 nm, with the power–delay product, delay time, and on–state current ratios often ranging between 0.59 and 2.65, facilitating the development of CFETs. This study provides important theoretical insights highlighting the potential of 1D RCRs as promising channel materials for sub 5 nm 1D CFETs with both HP and LP application requirements.