High‐Mobility p‐Type Te _x Se _{1‐ x}

ABSTRACT

Scalable high‐mobility p‐type semiconductor films hold considerable promise for advancing the performance of both photoelectronic devices and complementary metal‐oxide‐semiconductor technologies. Currently, tellurium (Te)‐based semiconductors exhibit high intrinsic hole mobility and compatibility with low‐temperature processing, making them promising candidates for cost‐effective p‐type materials. However, owing to their low Gibbs free energy, they are prone to oxidation into TeO ₂ , which introduces deep‐level defects and severely degrades hole transport, thereby hindering practical applications. Here, we present an effective antioxidant strategy based on ytterbium (Yb) doping, wherein the strong Te–Yb bonding and high oxygen affinity of Yb effectively suppress the oxidation of Te to TeO ₂ , fundamentally stabilizing Te _x Se _{1‐ x} alloys. The resulting Te _0.7 Se _0.3 :Yb films exhibit a remarkable hole mobility of 177.5 cm ² V ⁻¹ s ⁻¹ . Furthermore, ZnO/Te _0.7 Se _0.3 :Yb photodetectors achieve a high responsivity of 0.21 A/W at 1300 nm, enabling multispectral imaging for precise target discrimination. These results demonstrate the Yb‐enabled oxidation suppression for Te‐based semiconductor, making a crucial stride toward the establishment of commercially viable high‐mobility p‐type semiconductor technology and short‐wavelength infrared photoelectronics.