Highly Oriented and Continuous Epitaxial 2D Tellurium on Violet Phosphorus With Transistor–Memory Functionality

ABSTRACT

Two‐dimensional tellurium (2D Te) is promising for electronic and optoelectronic applications. However, epitaxial growth of highly oriented and structurally continuous 2D Te remains challenging due to its intrinsic growth anisotropy. Here, we address this limitation by combining violet phosphorus (VP) as an epitaxial template with a two‐stage annealing strategy. Pre‐annealing enhances Te absorption and facilitates preferentially aligned Te nucleation on VP, while post‐growth annealing promotes lateral diffusion and the coalescence of co‐oriented domains, resulting in a highly aligned and laterally continuous Te film. In addition to serving as an epitaxial template, annealed VP also contributes interfacial charge storage capability. On this basis, a dual‐gate Te/VP heterostructure device is demonstrated that integrates transistor–memory functionality. The fabricated device exhibits an on/off current ratio exceeding 10 ³ with negligible hysteresis under top‐gate field‐effect transistor operation, as well as a large memory window of approximately 114.7 V under ±60 V bottom‐gate sweeps. This work establishes a practical route for the epitaxial growth of orientation‐defined and continuous 2D Te, providing a promising platform for multifunctional electronic applications.