DOI: 10.1039/d6ta08045f ISSN: 2050-7488

Highly effective boron-doped ZnO passivating contacts for crystalline silicon solar cells

Piyumi Kodithuwakku, Christian Samundsett, Stephane Armand, Gabriel Bartholazzi, Daniel H. Macdonald, Lachlan E. Black

The influence of boron doping for ALD ZnO:B films within SiO x /ZnO:B/Al 2 O 3 electron-selective passivating contact stacks on c-Si is explored. Passivation and contact performance are correlated with structural, electrical and optical properties.

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