High Thermoelectric Performance in n‐Type Bi 2 (Te,Se) 3 Enhanced by Incorporation of 2D MoS 2
Zhengqin Wang, Hua‐Lu Zhuang, Jincheng Yu, Hezhang Li, Yilin Jiang, Jun Pei, Zhanran Han, Lu Chen, Chen Chen, Su‐Wei Zhang, Chao Wang, Yuzuru Miyazaki, Jing‐Feng LiABSTRACT
Commercial thermoelectric (TE) modules are mostly made from bismuth telluride (Bi 2 Te 3 ) based alloys due to their superior TE performance at low temperatures. However, the TE performance of n‐type Bi 2 (Te,Se) 3 remains inferior compared to its p‐type counterpart, posing a significant bottleneck to further increasing the conversion efficiency of TE devices. In this study, we present an effective strategy to enhance the TE performance of n‐type Bi 2 (Te,Se) 3 by incorporating 2D MoS 2 nanoflakes, which effectively modulates grain morphology and phase composition, leading to a remarkable enhancement in electrical conductivity. As a result, a maximum peak figure of merit ( zT ) value of 1.3 at 450 K is achieved, with a high average zT exceeding 1.2 between 300 and 500 K. This work provides a promising pathway for developing high‐performance n‐type Bi 2 (Te,Se) 3 ‐based thermoelectric materials that are indispensable for manufacturing high‐efficiency TE devices.