Hf0.5Zr0.5O2-based ferroelectric negative-capacitance carbon nanotube field-effect transistors for steep-slope switching and low-power logic application

Semiconducting carbon nanotubes (CNTs) exhibit exceptional electrical properties, making them highly promising candidates for conductive channel materials in the post-Moore era. However, enhancing the gate control capability of CNT-based transistors remains a critical research challenge, as it is essential for building high-performance, low-power CNT transistors. Zirconium-doped hafnium oxide (HZO), a high-k gate dielectric material with excellent ferroelectric properties, enables transistors to surpass the 60 mV/dec subthreshold swing limit through its negative capacitance effect. In this study, HZO ferroelectric thin films were fabricated using atomic layer deposition, and CNT conductive channel layers were prepared via solution deposition, resulting in a novel CNT-based negative-capacitance transistor. The device demonstrated outstanding electrical performance, including an on/off current ratio of 107, a subthreshold swing of 58 mV/dec, and an operating voltage below 0.5 V. Compared to traditional silicon-based field-effect transistors (FETs), this thin-film transistor exhibits significantly reduced power consumption. In addition, logic gate circuits based on the proposed HZO-CNT FET were further designed and simulated, demonstrating the feasibility of utilizing this device for low-power logic-function applications. The CNT-based HZO ferroelectric gate dielectric transistor studied in this work provides a promising platform for exploring future low-power electronic devices and integrated circuit applications.