Gamma irradiation of Ge-doped and radiation-hard silica fibers at cryogenic temperatures: Mitigating the radiation-induced attenuation with 1550 and 970 nm photobleaching

We investigated the effects of gamma irradiation on radiation-induced attenuation (RIA) in photosensitive (Ge-doped) and radiation-hard (F-doped) fibers at cryogenic temperatures (77 K) under different photobleaching conditions. We show that increasing the probe power (1550 nm) and injecting lower wavelength light (970 nm) both resulted in a significant reduction in RIA in both fiber types, where radiation-hard fibers were intrinsically more resistant to the RIA. Deconvolution of RIA growth curves revealed that the RIA was composed of transient and long-term growth components that were correlated with distinct radiation-induced defects specific to each fiber composition. The 1550 nm light more effectively suppressed the transient RIA, while 970 nm more effectively suppressed the long-term RIA. Ultimately, we show that cryogenic RIA may be effectively managed in fiber optic sensing systems using radiation-hard fibers and dual-wavelength photobleaching strategies.