Functional Z-Ligand Passivation for Photostable Barrier-Free Pixelated Quantum Dot Color Conversion Layers
Liuqing Han, Haixin Zhang, Qizhong Lin, Yangyang Xie, Yonghui Zhang, Chong Geng, Yang Li, Shu XuAbstract
The practical application of quantum dot photoresists (QDPRs) for high-resolution displays is critically hindered by the insufficient passivation of surface anionic sites. Here, we report a surface modification strategy that integrates synergistic Z-type ligand zinc bis[2-(methacryloyloxy)ethyl] phosphate (Zn-BMEP) and zinc mono-2-(methacryloyloxy)ethyl succinate (Zn-MMES) to overcome these intrinsic limitations. The Z-type ligands selectively bind to anionic sites via phosphine-mediated surface reaction, forming a Zn-rich surface with hybrid MMES-BMEP groups that endow the QDs with both robust surface passivation and high solubility in photoresists and their solvents. The cured QDPRs achieve a high photoluminescence quantum yield of up to 87% and demonstrate remarkable photostability, with the red and green QDPR layers retaining over 90 and 83% of their initial emission intensity after 500 h of accelerated aging at 85 °C, even without air-barrier encapsulation. Photolithographic patterning of the QDPR yields high-resolution color conversion layers with 2 μm pixel size, excellent uniformity, and superior color performance. This surface engineering strategy resolves the trade-off between surface stability and photoresist compatibility, paving the way for stable, high-performance QDPRs in next-generation displays.