Full‐Printed Organic Nano‐Floating‐Gate Transistors for Non‐Volatile Memories

ABSTRACT

Nano‐floating‐gate transistors (NFGT) are promising for high‐density data storage devices, but fully printed devices remain challenging due to interlayer erosion during processing and poor control over structural and charge transport pathways. Here, we demonstrate a fully printed organic NFGT through a rationally designed ink system and an orthogonal direct‐ink‐writing strategy. Central to this approach is the use of block copolymer‐grafted nanoparticles that enable one‐step printing of a uniform, zebra‐patterned nano‐floating‐gate/tunneling dielectric composite belt. This composite belt can not only overcome interlayer erosion but also templates the crystallization of the subsequently deposited semiconductor into a uniaxially oriented active layer, a morphology distinct from the polycrystalline or disordered structures typically obtained by conventional deposition methods. The resulting single‐crystalline orientation facilitates efficient charge percolation, leading to a doubling in carrier mobility and a 50% reduction in threshold voltage compared to non‐oriented counterparts. The fully printed organic NFGT exhibits a hole mobility over 0.1 cm ² ·V ^{− 1} ·s ^{− 1} , an on/off current ratio of ∼10 ⁴ , robust endurance over 200 program/erase cycles, and retention stability exceeding 10 ⁴ s. This work not only addresses key integration barriers in printed organic multilayer electronics but also establishes a microstructure‐templating strategy to enhance the performance of solution‐processed devices.