Four-Dimensional Scanning Transmission Electron Microscopy: Part I: Imaging, Strain Mapping, and Defect Detection

Abstract

Four-dimensional scanning transmission electron microscopy (4D-STEM) is a spatially resolved electron diffraction technique that records the electron scattering distribution at each sampling point. 4D-STEM provides researchers with information that can be analyzed in a multitude of ways to characterize a sample’s structure, including imaging, strain measurement, and defect analysis. This article introduces the basics of the technique and some areas of application with an emphasis on semiconductor materials.