DOI: 10.1039/d6ra04918d ISSN: 2046-2069

First-principles study of electronic, optical, and magnetic properties of Ta/Nb-doped and (Ta/Nb, V Si ) Co-doped 4H-SiC

Hong-Bin Yu, Qi-Lin Chen, Jia-Min Li, Shu-Xiang Fu, Hao Lu, Yu-Tao Ma, Chuan-Jia Tong, Jian Wu

The incorporation of substitutional transition-metal heteroatoms (Ta, Nb) and intrinsic silicon vacancies (V Si ) induces pronounced modulation of the electronic, optical, and magnetic properties of 4H-SiC.