Ferroelectric-Enhanced Ultrafast Nonvolatile Floating-Gate Memory

Abstract

Floating-gate memory, as one of the most widely used nonvolatile memories for practical deployments, plays a significant role in modern electronics. However, its inherent speed limitations make it challenging to keep pace with the explosive growth of data generation and the evolving demands of innovative hardware applications. Herein, we demonstrate an ultrafast floating-gate memory based on a two-dimensional (2D) MoS2/h-BN/graphene/CuInP2S6 heterostructured device. Comprehensive experimental investigations and technology computer-aided design (TCAD) simulations reveal that the matched ferroelectric polarization field of CuInP2S6 enhances the electric field across the tunneling layer, thereby effectively facilitating Fowler–Nordheim tunneling. This enables program/erase speeds as low as 13 ns, a performance competitive with that of dynamic random access memory (DRAM) that boasts high operational speeds but suffers from volatility. Our findings demonstrate the enormous potential of ferroelectric-enhanced floating-gate memory for next-generation high-speed nonvolatile memory and cutting-edge hardware applications.