DOI: 10.21597/jist.1254573 ISSN:

Fabrication and Electrical Characterization of Cu1-xCrxO/n-Si Diodes by Sol Gel Spin Coating Method

ลžeyhmus TOPRAK, ลžerif RรœZGAR
  • General Medicine
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Undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol gel spin coating method. These electrical properties of copper oxide-based heterojunction structures were examined as a function of Cr doping concentrations. The results show that a change in Cr concentration significantly affects the electrical properties of Ag/Cu1-xCrxO/n-Si diodes. The all diodes exhibit rectification behavior, as shown by their dark ๐ผโˆ’๐‘‰ characteristics. The crucial junction parameters such as series resistance (R๐‘†), rectification ratio (๐‘…๐‘…), ideality factor (๐‘›) and barrier height (ฮฆ๐ต) were calculated by using ๐ผโˆ’๐‘‰ data. The calculated values for the ideality factor (n), which offered details about the performance of the diodes, range from 2.16 to 2.78. The highest ๐‘…๐‘… value was obtained from Cu0.5Cr0.5O/n-Si diode. In addition, the capacitance-voltage (๐ถโˆ’๐‘‰) characteristics of the diodes were measured in the frequency range of 10 kHz and 1 MHz. The ๐ถโˆ’2โˆ’๐‘‰ graphs were employed to calculate the values of ๐‘๐‘ฃ, ๐ธ๐‘“, ๐ธ๐‘š๐‘Ž๐‘ฅ, and ฮฆ๐ต (๐ถโˆ’๐‘‰). The results show that the electrical properties of Ag/Cu1-xCrxO/n-Si diodes can be controlled by various chromium doping concentration.

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