Exploring the Potential of CsGeI 3 Photovoltaics: Simulation Based Investigation for Optimal Device Configuration and Efficiency
Roopam, Jyoteesh Malhotra, Jaya Madan, Rahul PandeyABSTRACT
For generating lead‐free photovoltaic devices, CsGeI 3 appears as a good alternative because they show significant benefits in terms of materials and also provides environmental compatibility. It focuses on increasing stability and removing toxicity from Perovskite solar cell (PSC) while introducing an inexpensive electron transport layer (ETL) material, n‐TiO2. Subsequently, an intrinsic‐CsGeI 3 absorber layer based on FTO/n‐TiO 2 /i‐CsGeI 3 /p‐CsGeI 3 /Au is proposed, which is economical for solar cell production. For performance analysis and modeling, the SCAPS‐1D simulator has been used. Therefore, an innovative solar‐cell device based on inorganic material CsGeI 3 is implemented. Simulating with the p ‐type of CsGeI 3 doped hole transport layer (HTL) material, accomplishing optimal device configurations, yielding a power conversion efficiency (PCE) of 11.07%, along with short circuit current density (J sc ) of 21.06 mA/cm 2 , a fill factor (FF) of 65.15%, and an open circuit voltage (V oc ) of 0.81 volts for the configuration of FTO/n‐TiO 2 /i‐CsGeI 3 /p‐CsGeI 3 /Au.