DOI: 10.1039/d5tc01687h ISSN: 2050-7526
Experimental demonstration of in-memory computing using pressure stimulated SnO2−x-based memristive device as inverter and active-low 2 : 1 multiplexer
Bishal Kumar Keshari, Soumi Saha, Sanghamitra DebRoy, Akshay Salimath, Venkat Mattela, Subhradeep Pal, Surya Shankar Dan, Parikshit SahatiyaThis article reports a resistive chip-enabler logic inverter and an active-low 2 : 1 multiplexer based on Ag/SnO2−x/ITO structured pressure-sensitive memristive devices for in-memory computing applications.