DOI: 10.1039/d6tc02527g ISSN: 2050-7526

Etching-assisted self-separation in GaN crystal growth: substrate pretreatment, interface engineering, and integrated manufacturing

Lanjing Sun, Ronglin Pan, Ming Ma, Zhenrong Li

This review systematically explores etching-assisted self-separation in GaN crystal growth. By synergizing interface engineering, epitaxial kinetics, and stress control, it provides a roadmap for scalable, damage-free GaN manufacturing.

More from our Archive