DOI: 10.1126/science.1103218 ISSN:
Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films
K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L.-Q. Chen, D. G. Schlom, C. B. Eom- Multidisciplinary
Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO 3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO 3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.