Enhanced Temperature Stability of Bismuth‐Layered Ceramics’ Piezoelectric Properties via Ferroelectric Domain Dynamics
Zhaoxiang Huang, Qifan Li, Jintao Zhang, Yong Chen, Kan YuABSTRACT
In this study, aiming to achieve high‐temperature stability alongside a high piezoelectric coefficient, a series of Na 0 . 5 Bi 4 . 5 Ti 3 . 94‐x Mn 0 . 06 Nb x O 15 bismuth‐layered piezoelectric ceramics were prepared and poled under an applied electric field of 12 kV/mm to activate nanodomains within the ceramic and induce their orientation. Comprehensive analysis revealed that the incorporation of Nb 5 + ions into the B‑site of the lattice resulted in a reduction of ferroelectric domain size and an increase in ferroelectric domain density. Consequently, the electrical properties of the Na 0 . 5 Bi 4 . 5 Ti 3 . 94‐x Mn 0 . 06 Nb x O 15 ceramics were significantly improved. Notably, the composition with x = 0.04 exhibited a particularly high piezoelectric coefficient ( d 33 ) of 40 pC·N − 1 and a high Curie temperature ( T C ) of 671.3°C. Furthermore, this composition demonstrated excellent thermal stability, maintaining d 33 above 30 pC·N − 1 over a temperature range of 25°C–400°C. These findings not only position this material as a robust candidate for high‑temperature applications but also provide valuable insights into the design of piezoelectric ceramics with enhanced stability and performance.