DOI: 10.1039/d5tc04475h ISSN: 2050-7526
Enhanced switching characteristics in amorphous IGZO FETs via an HfO 2 -induced quasi-two-dimensional electron channel
Seyoung Oh, Somi Lee, Yedam Kim, Yujung Kim, Minhee Kim, Shinhoi Kim, Yeongeon Kwon, Ah Ra Kim, Ojun Kwon, Jae Woo Lee, Woojin Park, Byungjin ChoEnhancing the switching performance of amorphous InGaZnO transistor is enabled through quasi-2-dimensional electron channel created by an HfO 2 passivation.