Enhanced energy storage performance in PbZrO3 antiferroelectric films through synergistic doping and strain strategies

Antiferroelectric thin films, particularly PbZrO3-based systems, are attractive for advanced energy storage due to their field-induced phase transitions and high dielectric responses. However, achieving high energy storage density remains challenging in such film system, because the competition between ferroelectric and antiferroelectric phases in antiferroelectric thin films is very sensitive. In this study, we tackle the common challenges of insufficient polarization in PbZrO3 epitaxial films by introducing Y at the A-site and employing compressive strain simultaneously. Consequently, the Y-doped PbZrO3 epitaxial film exhibits a significantly enhanced maximum polarization (Pm) of 128.89 μC/cm2 and an impressive energy storage density (Ue) of 44.73 J/cm3. This work demonstrates the effectiveness of synergistic doping and strain strategies for designing high-performance antiferroelectric energy storage materials.