Engineering Topological Phases in Two‐Dimensional Materials: A Path from Preparation to Device Applications
Yuanming Ye, Hongwei ZhuABSTRACT
Owing to their topologically protected edge or surface states, rapid electronic transport, and highly tunable physical properties, two‐dimensional topological materials (2D TMs) have garnered significant attention in condensed matter physics and materials science, and are regarded as potential candidates for quantum computing. Since the first observation of the quantum Hall effect, fundamental research on the physics of TMs has made remarkable progress. To better utilize the unique properties of TMs, the importance of material fabrication and phase engineering of topological states has become increasingly prominent. This review systematically discusses phase engineering in 2D TMs, from their growth to device applications. First, various topological phases and related 2D materials are introduced briefly. Next, the growth methods for 2D TMs are summarized. It then discusses progress and limitations in growth, driven by the requirements of characterization and application. Furthermore, the general approaches for modulating topological phases are reviewed, alongside the current applications in electronic devices. Finally, the review outlines future directions and challenges in phase engineering of 2D topological materials, aiming to promote the transition of 2D TMs from fundamental physics research to phase‐engineered material platforms.