Enabling High‐Frequency Characterization for Dynamic Modeling of Schottky Barrier Field‐Effect Transistors

This work presents a comprehensive methodology describing static and dynamic characterization and compact modeling of an ambipolar Schottky barrier field‐effect transistor (SBFET) technology, taking into consideration the integration of specifically designed test structures necessary for accurate scattering parameter measurements. In this work, we demonstrate, for the first time, the complete design flow for this emerging technology, starting with design and fabrication of dedicated high‐frequency test structures for scattering‐parameter measurement up to 110 GHz. The high frequency data are then used to validate a physics‐based compact model for the ambipolar SBFETs. Physically meaningful results are obtained with a good agreement between the measured and compact model data, demonstrating the usefulness of such dedicated methodologies for the refinement of the emerging technology performance.