Electrochemical Metallization-Induced Localized Phase Transition for Integrated Memory and Neuromorphic Computing

Abstract

The energy inefficiency associated with the von Neumann architecture has driven extensive interest in memory devices capable of integrating storage and computation. Nevertheless, conventional phase-change random access memory (PCRAM) still suffers from fundamental device-level limitations because it relies on bulk Joule heating, causing severe thermal dissipation and limited switching efficiency. This work proposes an electrochemical metallization (ECM)-induced localized phase-transition strategy based on Ag/C-doped Sb2Te (C2ST21). Transient Ag conductive pathways confine current and thermal accumulation to realize localized phase-transition switching. Carbon doping stabilizes the amorphous lattice and suppresses Ag diffusion for improved reliability. Benefiting from synergistic ECM–phase transition coupling, the device achieves 6 ns ultrafast switching, 0.6 pJ ultralow RESET energy, and 4 × 105 cycle endurance. Its highly linear conductance modulation enables 96.2% MNIST recognition accuracy, offering a feasible route for energy-efficient neuromorphic computing systems.