Effects of Melt Zone Movement Rate on Crystallization Quality and Photoelectric Properties of GaInSb Crystals Grown With Traveling Heater Method

ABSTRACT

Ga _0.9 In _0.1 Sb crystals (27 mm diameter, 90 mm length) were prepared with a [110] oriented GaSb seed crystal through the traveling heater method (THM), and the effects of the melt zone movement rate on the structures and photoelectric properties were investigated. The crystallization quality and the photoelectric properties of the crystals initially improved and then declined with the melt zone movement rate increased from 0.5 mm/h to 1.5 mm/h. When the movement rate was 1.0 mm/h, the crystallization quality and the photoelectric properties were optimal, the crystal's dislocation density (1.51× 10 ³ cm ⁻² ) and radial segregation (0.032 mol%/mm) got their own lowest values, while its carrier concentration (1.57 × 10 ¹⁸ cm ⁻³ ), carrier mobility (1.71× 10 ³ cm ² /(V•s)), and infrared transmittance (55%) got their own highest values. However, when the rate was 0.5 mm/h, the crystallization quality and photoelectric properties were the worst, the dislocation density got the maximum 2.98 × 10 ³ cm ⁻² , the radial segregation got the maximum 0.074 mol%/mm, while the carrier concentration got the minimum 1.37 × 10 ¹⁸ cm ⁻³ , and the carrier mobility got the minimum 1.57 × 10 ³ cm ² /(V•s).