Effect on photoluminescence, mechanical and structural properties of various rare-earth doped NaNbO ₃ for optoelectronic applications

RE ³⁺ -doped NaNb _{(1− x )} RE _{( x )} O _{3− δ} ( x = 0.005) ceramics exhibited phase evolution, oxygen-vacancy-induced Raman shifts, a reduced band gap (3.49–3.42 eV), and tunable bluish-white to white emission, demonstrating promise for optoelectronic applications.