Effect of Surface Microstructure on Joints Using Nanoporous Cu Sheet for Power Devices

Wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are being developed as promising replacements for Si-based semiconductors. The operating temperature of SiC semiconductor is expected to be much higher. The replacement of soldering with new bonding process has been needed for WBG semiconductor devices. We have proposed a solid-state bonding process using nanoporous metal sheet, as a die-attach bonding method for WBG semiconductor devices. In this study, the bonding process using nanoporous Cu sheet as an insert metal was investigated to achieve a Cu disk/Cu disk bonding without solvent and flux. The shear strength of the joint using nanoporous Cu sheet at 350 and 300°C in formic acid atmosphere exceeded the shear strength of conventional Pb–5Sn solder joints which was approximately 18 MPa.