Dislocations in (011)-oriented vertical Bridgman β -Ga2O3 substrates

Dislocations in (011)-oriented β-Ga2O3 substrates grown by the vertical Bridgman method was investigated using x-ray topography (XRT), combined with x-ray reticulography. Transmission XRT reveals dislocations lying on the (001) plane and extending along [010], forming arrays associated with domain boundaries. Dislocations on the (011) plane were also identified but differ from those responsible for line-shaped pits on (001) epilayers. Reflection XRT showed good agreement with transmission XRT and enables classification of dislocation types based on contrast features. Reticulography confirms domain boundaries with misorientation on the order of 10−5 rad, providing insight into defect formation relevant to epi-growth and device performance.