Dielectric and temperature-dependent optimization of an asymmetric gate–drain engineered core–shell dopingless nanotube tunnel FET for analog and RF performance

The core–shell asymmetric dopingless nanotube TFET achieves ultra-low OFF-current (5.92 × 10 ⁻²¹ A µm ⁻¹ ), high I _ON / I _OFF ratio (1.43 × 10 ¹⁴ ), and superior analog/RF performance, with SiO ₂ at 300 K identified as the optimal operating conditions.