Device‐Characteristic‐Driven Co‐Optimization Framework for High‐Density Converters Using Diode‐Integrated SiC MOSFETs

ABSTRACT

With the evolution of wide‐bandgap power electronics, diode‐integrated silicon carbide MOSFETs (DioMOS) have emerged as a promising solution to eliminate the high reverse recovery losses inherent in traditional body diodes, thereby pushing the boundaries of power density and efficiency. However, the unique electrical and thermal characteristics of DioMOS necessitate a deeper level of system‐level co‐optimization. This paper proposes a device‐characteristic‐driven electro‐thermal co‐optimization framework designed to maximize the potential of DioMOS in high‐density power converters. First, a comprehensive characterization of DioMOS is conducted, focusing on its reverse conduction, switching behaviour and non‐linear temperature‐dependent loss characteristics. Based on these insights, a refined dead‐time model is established to balance reliability and efficiency. Subsequently, a system‐level design approach is detailed, addressing high‐current gate drive design, commutation loop optimization and thermal stress mitigation. Experimental results demonstrate that the proposed framework enhances system performance and thermal stability under high‐frequency and high‐temperature operating conditions.