Design and Growth of P-Type AlGaN Graded Composition Superlattice

A graded composition superlattice structure is proposed by combining simulation with experimentation. The structural factors affecting graded symmetric superlattices and graded asymmetric superlattices and their action modes are simulated and analyzed. A Mg-doped graded symmetric superlattice structure with high Al content, excellent structural quality, good surface morphology and excellent electrical properties was grown by MOCVD equipment. The AlxGa1−xN superlattice with Al composition of 0.7 in the barrier exhibits a hole concentration of approximately 5 × 1015 cm−3 and a resistivity of 66 Ω·cm.