DOI: 10.1039/d6ta06121d ISSN: 2050-7488

Defect compensation-limited carrier tuning reveals sulfur vacancy tolerance and an n -type growth window in β-AgBiS 2

Luping Shi, Abuduwayiti Aierken, Wenjun Xiao, Jinshun Bi, Ziqiang Xu, Lidong Dai, Gang Wang, Degui Wang, Mingqiang Liu, Changsong Gao, Zhilong He, Xuefei Liu

Defect compensation regulates the Fermi level, while sulfur-vacancy tolerance limits the impact of deep defects on recombination. Nonequilibrium quenching opens a narrow n -type growth window under Ag-rich, S-poor and Bi-rich conditions.

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