Crystal‐Field Engineering of Excited‐State Dynamics in Sb 3+ ‐Doped Metal Halides for Versatile Optoelectronic Applications
Yuqi Peng, Meiqin Xiao, Ping Chen, Junhao Ma, Jin‐Feng Liao, Xiangnan Gong, Yuanyuan Chang, Chengyi Xiong, Rongxing He, Lei Zhou, William W. YuABSTRACT
Antimony ion doping has been demonstrated as an effective strategy for modulating the photophysics of the host of organic‐inorganic metal halides (OIMHs). The as‐formed doping species exhibit distinct excited‐state dynamics and outstanding photoluminescence efficiency. However, the factors governing emission variations across different host lattices remain unclear. Herein, lattice engineering is employed to elucidate the elusive mechanisms of Sb 3+ dopant. Three novel OIMHs—AET‐Cd, AET‐In, and AET‐Sn—featuring central metals (Cd 2+ , In 3+ , and Sn 4+ ) with similar electron configuration (4d 10 5s 0 ) have been prepared to unveil the correlation between host structure and photoluminescence performance. After embedding Sb 3+ (4d 10 5s 2 ) into their lattices, these materials exhibit distinct emission peaks at 590 (AET‐Cd), 567 (AET‐In), and 630 nm (AET‐Sn), respectively. Contrary to the typical ion‐radius‐dependent trend, the emission shifts are attributed to differences in structural distortion and crystal field strength, influenced by both central ion radius and lattice symmetry. Benefitting from their remarkable and tunable photoluminescence properties, applications in second‐harmonic generation response, and anti‐counterfeiting are further demonstrated. Additionally, visible‐light‐communication based on Sb 3+ ‐doped materials achieves 2.6 MHz f ‐3 dB with a high data rate of 63 Mbps. These findings provide deep insights into structure‐property relationships and highlight the potential of them in versatile advanced optoelectronic applications.