DOI: 10.1039/d3nr90165c ISSN:
Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Seyeong Yang, Taegyun Kim, Sunghun Kim, Daewon Chung, Tae-Hyeon Kim, Jung Kyu Lee, Sungjoon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho- General Materials Science
Correction for ‘Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems’ by Seyeong Yang et al., Nanoscale, 2023, https://doi.org/10.1039/D3NR01930F.