DOI: 10.1039/d6na90047j ISSN: 2516-0230
Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials
Ho Kim Dan, Pham Tuan Vinh, Le Phuong Long, Huynh Thi Phuong Thuy, Nguyen Dinh HienCorrection for ‘Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials’ by Ho Kim Dan et al. , Nanoscale Adv. , 2026, 8 , 3817–3829, https://doi.org/10.1039/d6na00063k.