DOI: 10.1039/d3nr02395h ISSN:
Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor
Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Huizhong Zeng, Jiejun Wang, Yuting Liu, Xudong Yang, Lu Lv, Jiaqi Xu, Hao Yan, Chuangui Wu, Wanli Zhang- General Materials Science
Based on a novel differential pair consisting of two memristors (with opposite memristive behavior directions), which were realized by the modulation of oxygen vacancies, differential operation was implemented without subtraction circuits.