Conformal Transfer Enables Dual‐Mechanism Nanowire Transistors with Ultralow Subthreshold Swing
Qianqian Zhang, Yinchu Shen, Yuqing Kuai, Zongwen Li, Tianjiao Zhang, Chuan Qin, Ruotong Jia, Yunfei Xie, Xuan Ye, Wenbo Zhao, Yuda Zhao, Chao Gao, Guanyu Liu, Huan Hu, Li Lin, Zhi‐Xiang Zhang, Yaping Dan, Yang XuABSTRACT
Two‐dimensional materials show promise in post‐Moore electronics but face challenges in damage‐free conformal transfer onto nanostructures. Here, we propose a conformal transfer strategy based on a poly (propylene carbonate) support layer with a low glass transition temperature. Through the synergistic regulation of temperature and stress, large‐area monolayer MoS 2 achieves damage‐free conformal coverage of silicon nanowire (SiNW). The coverage height can reach up to 300 times the thickness of the nanowires themselves, far exceeding the geometric adaptation limits of conventional methods. By adjusting the aspect ratio of the SiNW, a spontaneous air gap is formed between the MoS 2 gate electrode and the side wall of nanowire. This air gap acts as a layer with an ultra‐low dielectric constant, thereby restructuring the gate‐channel electrostatic boundary conditions. This MoS 2 /Si nanowire dual‐mechanism transistor exhibits excellent electrical performance, featuring a subthreshold swing as low as 63.95 mV dec −1 . These results unveil the application potential of hybrid‐dimensional optoelectronic devices in compact transistor preamplifiers and logic device technology.